PRESSURE-DEPENDENT PHOTOLUMINESCENCE STUDY OF INXGA1-XN

We present the results of pressure-dependent photoluminescence (PL) st udies of single-crystal InxGa1-xN (0 less than or equal to x<0.15) fil ms grown on top of thick GaN epitaxial layers by metalorganic chemical vapor deposition with sapphire as substrates. PL measurements were pe rformed at 10 K as a function of applied hydrostatic pressure using th e diamond-anvil-cell technique. The luminescence emissions from the In xGa1-xN epifilms were found to shift linearly toward higher energy wit h increasing pressure. By examining the pressure dependence of the PL spectra, the pressure coefficients for the emission structures associa ted with the direct band gap of InxGa1-xN were determined. The values of the pressure coefficients were found to be 3.9X10(-3) eV/kbar for I n0.08Ga0.92N and 3.5X10(-3) eV/kbar for In0.14Ga0.86N. (C) 1997 Americ an Institute of Physics. [S0003-6951(97)03143-4].