This letter reports a new way of preparing wafer sized SiGe quantum cl
ots on an ordered mesoporous sol gel silica coated Si, It was found fr
om x-ray diffraction that very good regular layers of mesoscopic sized
SiGe quantum dots can be formed in the silica. Initial low temperatur
e photoluminescence measurements show much improved light emission of
the buried dots. This technique is a potential low cost method for pro
ducing quantum dot arrays. (C) 1997 American Institute of Physics. [S0
003-6951(97)02643-0].