PROPERTIES OF INTERFACE-ENGINEERED HIGH T-C JOSEPHSON-JUNCTIONS

We have created YBCO thin film ramp edge Josephson junctions by modifi cation of the edge surface prior to counterelectrode deposition. No de posited interlayer or barrier layer is employed. These devices are uni form and reproducible, and they display resistively shunted junction c urrent-voltage characteristics with excellent magnetic field modulatio n. IcRn values over the range 0.5-3 mV and corresponding R(n)A values of 6 x 10(-8)-1.2 x 10(-9) Omega cm(2) at 20 K are easily attained by varying the process. We believe these junctions offer significant prom ise as the building blocks of a high T-c electronics technology. (C) 1 997 American Institute of Physics.