MATERIAL CHARACTERISTICS OF PEROVSKITE MANGANESE OXIDE THIN-FILMS FORBOLOMETRIC APPLICATIONS

Citation
A. Goyal et al., MATERIAL CHARACTERISTICS OF PEROVSKITE MANGANESE OXIDE THIN-FILMS FORBOLOMETRIC APPLICATIONS, Applied physics letters, 71(17), 1997, pp. 2535-2537
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
17
Year of publication
1997
Pages
2535 - 2537
Database
ISI
SICI code
0003-6951(1997)71:17<2535:MCOPMO>2.0.ZU;2-3
Abstract
We are optimizing thin films of perovskite manganese oxides for bolome tric applications. We have studied the relevant material characteristi cs of several members of this family namely, La0.7Ba0.3MnO3, La0.7Sr0. 3MnO3, La0.7Ca0.3MnO3, and Nd0.7Sr0.3MnO3. Here, we discuss issues rel ated to the choice of material, the influence of deposition parameters , and postdeposition heat treatments on the relevant characteristics s uch as the resistivity-peak temperature (T-p) and the temperature coef ficient of resistance (TCR), For a given material, a higher peak tempe rature implies a larger temperature coefficient of resistance, In cont rast, on comparing different material systems, the TCR tends to decrea se as T-p increases. (C) 1997 American Institute of Physics. [S0003-69 51(97)01743-9].