ANALYSIS OF TRANSIENT INTERBAND LIGHT-MODULATION BY ULTRASHORT INTERSUBBAND RESONANT LIGHT-PULSES IN SEMICONDUCTOR QUANTUM-WELLS

Citation
A. Neogi et al., ANALYSIS OF TRANSIENT INTERBAND LIGHT-MODULATION BY ULTRASHORT INTERSUBBAND RESONANT LIGHT-PULSES IN SEMICONDUCTOR QUANTUM-WELLS, IEEE journal of quantum electronics, 33(11), 1997, pp. 2060-2070
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
33
Issue
11
Year of publication
1997
Pages
2060 - 2070
Database
ISI
SICI code
0018-9197(1997)33:11<2060:AOTILB>2.0.ZU;2-T
Abstract
We explore the transient characteristics of an interband resonant ligh t modulation process by ultrashort intersubband resonant light pulses in semiconductor quantum wells (QW's), The modulation characteristics in a three-level semiconductor QW system, including the effects due to in-plane momentum, have been investigated by a numerical analysis of the coupled Bloch equations using a density-matrix approach. We have s tudied the effect of the carrier density and the nature of the intersu bband coupling light on the transient absorption features of the inter band light, The modulation process has been compared in doped and undo ped QW's, The switching behavior of the strong interband light field i n presence of a train of intersubband light pulses has also been discu ssed.