ANALYSIS OF TRANSIENT INTERBAND LIGHT-MODULATION BY ULTRASHORT INTERSUBBAND RESONANT LIGHT-PULSES IN SEMICONDUCTOR QUANTUM-WELLS
Citation
A. Neogi et al., ANALYSIS OF TRANSIENT INTERBAND LIGHT-MODULATION BY ULTRASHORT INTERSUBBAND RESONANT LIGHT-PULSES IN SEMICONDUCTOR QUANTUM-WELLS, IEEE journal of quantum electronics, 33(11), 1997, pp. 2060-2070
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
SICI code
0018-9197(1997)33:11<2060:AOTILB>2.0.ZU;2-T
Abstract
We explore the transient characteristics of an interband resonant ligh
t modulation process by ultrashort intersubband resonant light pulses
in semiconductor quantum wells (QW's), The modulation characteristics
in a three-level semiconductor QW system, including the effects due to
in-plane momentum, have been investigated by a numerical analysis of
the coupled Bloch equations using a density-matrix approach. We have s
tudied the effect of the carrier density and the nature of the intersu
bband coupling light on the transient absorption features of the inter
band light, The modulation process has been compared in doped and undo
ped QW's, The switching behavior of the strong interband light field i
n presence of a train of intersubband light pulses has also been discu
ssed.