SEMICLASSICAL MODEL OF SEMICONDUCTOR-LASER NOISE AND AMPLITUDE NOISE SQUEEZING .2. APPLICATION TO COMPLEX LASER STRUCTURES

Authors
Citation
Jl. Vey et P. Gallion, SEMICLASSICAL MODEL OF SEMICONDUCTOR-LASER NOISE AND AMPLITUDE NOISE SQUEEZING .2. APPLICATION TO COMPLEX LASER STRUCTURES, IEEE journal of quantum electronics, 33(11), 1997, pp. 2105-2110
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
33
Issue
11
Year of publication
1997
Pages
2105 - 2110
Database
ISI
SICI code
0018-9197(1997)33:11<2105:SMOSNA>2.0.ZU;2-5
Abstract
We present noise studies of distributed feedback (DFB) laser structure s, where spatial hole burning (SHB) plays a key role performed using t he model described in Part I of this paper with particular emphasis on the influence of SHB, on the coupling coefficient kappa L, and on the laser facet reflectivities. These structures exhibit high amplitude n oise and the possible noise reduction is strongly reduced compared to Fabry-Perot structures. Didstributed Bragg reflector (DBR) lasers are better candidates even if their performances are also strictly determi ned by SHB and the loss in the Bragg reflector. Finally, limitations d ue to gain suppression are demonstrated for such complex lasers struct ures, We conclude on the optimum laser structure for amplitude squeeze d states generation.