PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FILMS FOR INTERFACE STUDIES

Silicon nitride (SiN(x)) films of varying stoichiometry (x = 1.04, 1.3 9 and 1.63) were deposited on silicon substrates at 250-degrees-C by p lasma-enhanced chemical vapour deposition (PECVD). The N/Si ratios wer e determined by electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering (RBS) measurements. Optical, electrical and interface characterization were carried out for the films. It was obs erved that nitrogen-rich films (x = 1.63) gave the best electrical pro perties and the lowest interface state density, which was 1.1 x 10(11) eV-1 cm-2. The resistivity and breakdown field of these films were 5. 1 x 10(13) OMEGA cm and 1.5 x 10(6) V cm-1, respectively.