P. Padmini et Trn. Kutty, INFLUENCE OF BI3-BATIO3 CERAMICS( IONS IN ENHANCING THE MAGNITUDE OF POSITIVE TEMPERATURE COEFFICIENTS OF RESISTANCE IN N), Journal of materials science. Materials in electronics, 5(4), 1994, pp. 203-209
Bi3+ ions substituting at Ba-sites in a limited concentration range wi
th another donor dopant occupying the Ti-sites in polycrystalline BaTi
O3 enhanced the positive temperature coefficient of resistance (PTCR)
by over seven orders of magnitude. These ceramics did not require norm
al post sinter annealing or a change to an oxygen atmosphere during an
nealing. These ceramics had low porosities coupled with better stabili
ties to large applied electric fields and chemically reducing atmosphe
res. Bi3+ ions limited the grain growth to less than 8 mum in size, th
ey enhanced the concentration of acceptor-type trap centres at the gra
in-boundary-layer regions and maintained complete tetragonality at low
grain sizes in BaTiO3 ceramics.