INFLUENCE OF BI3-BATIO3 CERAMICS( IONS IN ENHANCING THE MAGNITUDE OF POSITIVE TEMPERATURE COEFFICIENTS OF RESISTANCE IN N)

Citation
P. Padmini et Trn. Kutty, INFLUENCE OF BI3-BATIO3 CERAMICS( IONS IN ENHANCING THE MAGNITUDE OF POSITIVE TEMPERATURE COEFFICIENTS OF RESISTANCE IN N), Journal of materials science. Materials in electronics, 5(4), 1994, pp. 203-209
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
09574522
Volume
5
Issue
4
Year of publication
1994
Pages
203 - 209
Database
ISI
SICI code
0957-4522(1994)5:4<203:IOBCII>2.0.ZU;2-2
Abstract
Bi3+ ions substituting at Ba-sites in a limited concentration range wi th another donor dopant occupying the Ti-sites in polycrystalline BaTi O3 enhanced the positive temperature coefficient of resistance (PTCR) by over seven orders of magnitude. These ceramics did not require norm al post sinter annealing or a change to an oxygen atmosphere during an nealing. These ceramics had low porosities coupled with better stabili ties to large applied electric fields and chemically reducing atmosphe res. Bi3+ ions limited the grain growth to less than 8 mum in size, th ey enhanced the concentration of acceptor-type trap centres at the gra in-boundary-layer regions and maintained complete tetragonality at low grain sizes in BaTiO3 ceramics.