DEEP-LEVEL PHOTOLUMINESCENCE STUDIES OF UNDOPED AND TIN-DOPED (LEC) INP

The effects of tin doping on the deep-level photoluminescence (PL) spe ctra of (LEC) InP were studied. Specifically, the effect of rapid ther mal annealing (RTA) on the deep emission bands labelled as band A (1.1 3 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were in vestigated. Band A appeared in both undoped and doped samples, but it disappeared after RTA for all the samples. It is suggested that band A is due to the formation of a complex involving V(In) with residual im purities. The disappearance of band A after RTA is concomitant with th e appearance of bands B, C and D. The existence of band B is attribute d to the complex formation of V(P) with residual impurities. Band C wa s observed after the annealing process both in undoped and lightly-tin -doped samples and is believed to be due to the formation of V(P) sing le point defects. Band D was only observed in heavily doped samples an d it is believed to be the effect of In(P) antisite defects.