TIME-DEPENDENT SNAPBACK IN THIN-FILM SOI MOSFETS

During pulsed stressing of SOI MOSFET's for ESD characterization, the turn-on voltage of the parasitic bipolar transistor was observed to be a function of the stress pulse-width. This observation can be underst ood in terms of a capacitive charging model, The theory behind this ti me-dependent snapback is presented in this letter along with the exper imental results, Comparisons with bulk-Si devices indicate that this p henomenon is specific to SOI and is a manifestation of the floating bo dy effect.