HIGH-VOLTAGE OPERATION OF FIELD-EFFECT TRANSISTORS IN SILICON-CARBIDE

Authors
KONSTANTINOV AO IVANOV PA NORDELL N KARLSSON S HARRIS CI
Citation
Ao. Konstantinov et al., HIGH-VOLTAGE OPERATION OF FIELD-EFFECT TRANSISTORS IN SILICON-CARBIDE, IEEE electron device letters, 18(11), 1997, pp. 521-522
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
11
Year of publication
1997
Pages
521 - 522
Database
ISI
SICI code
0741-3106(1997)18:11<521:HOOFTI>2.0.ZU;2-Q
Abstract
Buried-gate field-effect transistors with blocking voltages up to 600- 700 V have been fabricated in 6H polytype silicon carbide using a tren ch technology, The devices achieve drain currents of up to 60 mA for a channel width of 0.72 mm and have a turn-off gate voltage of about 40 V. We report on the device characteristics and analyze the performanc e under high-voltage device operation.