THE TEOS CVD OXIDE DEPOSITED ON PHOSPHORUS IN-SITU DOPED POLYSILICON WITH RAPID THERMAL ANNEALING

Authors
KAO CH LAI CS LEE CL
Citation
Ch. Kao et al., THE TEOS CVD OXIDE DEPOSITED ON PHOSPHORUS IN-SITU DOPED POLYSILICON WITH RAPID THERMAL ANNEALING, IEEE electron device letters, 18(11), 1997, pp. 526-528
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
11
Year of publication
1997
Pages
526 - 528
Database
ISI
SICI code
0741-3106(1997)18:11<526:TTCODO>2.0.ZU;2-E
Abstract
A TEOS oxide deposited on the phosphorus in situ doped polysilicon ann ealed with RTA is shown to have good electrical characteristics such a s a high breakdown field (>12 MV/cm), especially for the positive bias , and a large Qbd (26 Coul/cm(2)). The improvement is believed to be d ue to the relatively smooth surface of the in situ doped polysilicon a nd the reduction of the trapping density by RTA.