NOVEL FERROELECTRIC EPITAXIAL (BA,SR)TIO3 CAPACITOR FOR DEEP-SUBMICRON MEMORY APPLICATIONS

Authors
KAWAKUBO T ABE K KOMATSU S SANO K YANASE N MOCHIZUKI H
Citation
T. Kawakubo et al., NOVEL FERROELECTRIC EPITAXIAL (BA,SR)TIO3 CAPACITOR FOR DEEP-SUBMICRON MEMORY APPLICATIONS, IEEE electron device letters, 18(11), 1997, pp. 529-531
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
11
Year of publication
1997
Pages
529 - 531
Database
ISI
SICI code
0741-3106(1997)18:11<529:NFE(CF>2.0.ZU;2-C
Abstract
A novel ferroelectric capacitor cell was developed using a (Ba,Sr)TiO3 (BSTO)/SrRuO3 (SRO) heteroepitaxial technique on Si and strontium tit anate substrates. Distinct ferroelectricity results from the c-axis be ing elongated due to lattice mismatch between the dielectric and elect rode. The epitaxial BSTO capacitor showed distinct ferroelectricity ev en at 30 nm thickness, which is the thinnest ferroelectric film so far , Its superior ferroelectric properties, reliability, and sub-micron s ilicon process compatibility were confirmed.