TOTAL-DOSE RADIATION RESPONSE OF PLASMA-DAMAGED NMOS DEVICES

Authors
YUE J LO E FLANERY M
Citation
J. Yue et al., TOTAL-DOSE RADIATION RESPONSE OF PLASMA-DAMAGED NMOS DEVICES, IEEE electron device letters, 18(11), 1997, pp. 532-534
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
11
Year of publication
1997
Pages
532 - 534
Database
ISI
SICI code
0741-3106(1997)18:11<532:TRROPN>2.0.ZU;2-Y
Abstract
Plasma-damaged NMOS devices were subjected to the X-ray total dose irr adiation, Unlike the traditional hot-carrier or Fowler-Nordheim (F-N) stress where the hole trap generation is less pronounced, this study s hows enhanced hole trap and interface trap generation on plasma-damage d devices after total dose irradiation.