REDUCTION OF HOT-CARRIER GENERATION IN 0.1-MU-M RECESSED CHANNEL NMOSFET WITH LATERALLY GRADED CHANNEL DOPING PROFILE

To investigate the substrate current characteristics of a recessed cha nnel structure with graded channel doping profile, we have fabricated and simulated the Inverted-Sidewall Recessed-Channel (ISRC) nMOSFET an d compared it with a conventional planar nMOSFET, Experimentally, the ISRC nMOSFET shows about 30% reduction of substrate current, even thou gh the drain current is almost the same, At 0.12-mu m channel length, the I-SUB/I-DS value of the conventional nMOSFET is measured to be 1.6 8 times higher than that of the ISRC nMOSFET, Also, using simulation, it is verified that the reduction of electric field at the drain junct ion of ISRC nMOSFET results from the graded channel doping profile, no t from the recessed channel structure.