A SINGLE-POLY EEPROM CELL IN SIMOX TECHNOLOGY FOR HIGH-TEMPERATURE APPLICATIONS UP TO 250 DEGREES-C

A thin-film SIMOX technology has been used for fabrication of a single -polysilicon EEPROM cell suitable for high-temperature applications. T he two transistor cell is composed of a select transistor and a floati ng gate transistor with 10 nm tunnel oxide. The EEPROM process extensi on requires only a few steps suitable for embedded memory applications with low cost and turn around time, Endurance and data retention char acteristics of the SIMOX EEPROM cell are presented for a temperature o f 250 degrees C. The problem of temperature induced leakage currents i n the select transistor at elevated temperatures is investigated.