DIAMOND SURFACE-CHANNEL FET STRUCTURE WITH 200 V BREAKDOWN VOLTAGE

An enhancement mode diamond FET using a hydrogen-terminated surface as hole conductive channel has been fabricated with 200 V gate to drain breakdown voltage, At the 8.5-mu m gate length the maximum drain curre nt was 22 mA/mm. 90 mA/mm maximum drain current was obtained at a gate length of 3.0 mu m. Scaling to below 1 mu m gate length assuming unde graded breakdown conditions will result in a projected RF power handli ng capability above 6 W/mm.