VERY HIGH-TEMPERATURE OPERATION OF DIAMOND SCHOTTKY DIODE

For the first time, the operating temperature of a Schottky diode stru cture has been pushed to 1000 degrees C, The diode structure consists of a Si-based Schottky material deposited onto a homoepitaxial boron d oped diamond surface. At high temperatures, the forward I-V characteri stics is dominated by the thermionic emission (n approximate to 1.01) across a barrier of 1.9 eV height. The reverse characteristics are sti ll dominated by thermally activated defects, The series resistance sho ws thermal activation associated with the boron doping.