RAPID THERMAL RECRYSTALLIZATION OF AMORPHOUS-SILICON FILMS

Authors
BESHKOV GD DIMITROV DB LAZAROVA V KOPRINAROVA J GESHEVA K VLAEV E
Citation
Gd. Beshkov et al., RAPID THERMAL RECRYSTALLIZATION OF AMORPHOUS-SILICON FILMS, Journal of materials research, 12(10), 1997, pp. 2511-2514
Citations number
9
Categorie Soggetti
Material Science
Journal title
Journal of materials research → ACNP
ISSN journal
08842914
Volume
12
Issue
10
Year of publication
1997
Pages
2511 - 2514
Database
ISI
SICI code
0884-2914(1997)12:10<2511:RTROAF>2.0.ZU;2-K
Abstract
In this work the properties of polycrystalline silicon layers obtained by rapid thermal annealing have been discussed. Amorphous silicon lay ers with thickness of 3000 Angstrom have been deposited on silicon waf ers in rf sputtering system. The layers were annealed for 15 s to 5 mi n at temperatures in the range 800-1200 degrees C in vacuum 5 x 10(-5) Torr. A correlation was established between structure, morphology, sh eet resistance, and the parameters of the RTA annealing.