ON THE FORMATION OF SOLID-STATE CRYSTALLIZED INTRINSIC POLYCRYSTALLINE GERMANIUM THIN-FILMS

A two-step heat treatment process has been employed to crystallize low pressure deposited thin films of amorphous germanium. Large grain p-t ype polycrystalline germanium with a Hall effect hole mobility of grea ter than 300 cm(2)/Vs has been obtained. Films with near intrinsic con ductivity, necessary for the construction of practical enhancement-mod e insulated-gate thin film transistors, were obtained by introducing p hosphorus as a compensating dopant. High Hall effect electron mobility of 245 cm(2)/Vs has been measured on the resulting n-type polycrystal line germanium thin films.