QUANTUM-SIZE EFFECT OF ZNSE MICROCRYSTAL-DOPED SIO2 GLASS THIN-FILMS PREPARED BY RF-SPUTTERING METHOD

Semiconductor ZnSe microcrystal-doped SiO2 glass thin films were prepa red by the RF-magnetron sputtering method. The particle size of ZnSe m icrocrystals in the films depended on sputtering conditions such as in put power, substrate temperature, and relative surface area ratio (ZnS e/SiO2) in the target. The blue shift of the optical absorption edge w as observed in these glass films. This blue shift energy was explained in terms of the independent confinement of electrons and positive hol es, Coulomb force and the influence of a collapsed exciton and the die lectric constant of the matrix glass being taken into consideration.