An. Obraztsov et al., OPTICAL-ABSORPTION IN POROUS SILICON STUDIED BY PHOTOACOUSTIC-SPECTROSCOPY, Physica status solidi. b, Basic research, 203(2), 1997, pp. 565-569
Nanoporous Si layers have been investigated by photoacoustic (PA) spec
troscopy. The optical absorption spectra for porous Si on p-type Si su
bstrates were obtained in the region of 300 to 1500 nm. The absorptivi
ty became remarkable at 600 nm and increased drastically up to the sat
uration value while the wavelength decreased from 500 to 300 nm. On th
e basis of the comparison of photoacoustic spectra registered for diff
erent light modulation frequencies the value of thermal conductivity o
f porous Si was estimated to be 1.55 x 10(-3) W/(cm K).