SPUTTER-DEPOSITION OF ATOMICALLY FLAT AU(111) AND AG(111) FILMS

Citation
M. Kawasaki et H. Uchiki, SPUTTER-DEPOSITION OF ATOMICALLY FLAT AU(111) AND AG(111) FILMS, Surface science, 388(1-3), 1997, pp. 1121-1125
Citations number
19
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
388
Issue
1-3
Year of publication
1997
Pages
1121 - 1125
Database
ISI
SICI code
0039-6028(1997)388:1-3<1121:SOAFAA>2.0.ZU;2-G
Abstract
A simple Ar-ion sputter deposition has allowed preparation of atomical ly flat Au(111) and Ag(111) films in conditions of much lower substrat e temperature and/or deposition rate compared with vacuum deposition. At a deposition rate less than 1 Angstrom s(-1), Au(111) films with ex tended terrace structures could be grown on a freshly cleaved and heat ed mica (similar to 300 degrees C) without extensive substrate prebaki ng. Sputtered Ag(111) films could also be grown atomically flat at a s imilar deposition rate, preferably on Au(111) predeposited on mica. Pa rticularly smooth Ag(111) films often accompanied by hexagonal facetin g grew at substrate temperatures, 150-200 degrees C, near the point at which serious clouding of the film surface set in. (C) 1997 Elsevier Science B.V.