Temperature dependence of the electronic structure of Yb4As3 was inves
tigated by the observation of the reflectivity spectra in the energy r
ange from 2 meV to 50 eV at several temperatures from 39 to 320 K. In
the photon energy range below 10 meV, the temperature dependence of th
e spectrum can be qualitatively explained by two-band model previously
proposed. An absorption band with strong temperature dependence was o
bserved at 0.4 eV. The origin is considered to be the mixing state bet
ween unoccupied Yb3+-4f and 5d. The state is considered to be importan
t to understand the anomalous temperature dependence of the physical p
roperties. In the energy range above 1 eV, the spectrum does not chang
e with the temperature. The structure of the occupied and unoccupied s
tates near the Fermi level is clarified.