POLARIZATION-DEPENDENT PHENOMENA IN THE REFLECTIVITY SPECTRA OF SEMICONDUCTOR QUANTUM MICROCAVITIES

Citation
D. Baxter et al., POLARIZATION-DEPENDENT PHENOMENA IN THE REFLECTIVITY SPECTRA OF SEMICONDUCTOR QUANTUM MICROCAVITIES, Physical review. B, Condensed matter, 56(16), 1997, pp. 10032-10035
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
16
Year of publication
1997
Pages
10032 - 10035
Database
ISI
SICI code
0163-1829(1997)56:16<10032:PPITRS>2.0.ZU;2-R
Abstract
Angular-dependent reflectivity techniques are employed to probe the ex citon-polariton states of a semiconductor quantum microcavity. The spe ctra exhibit marked polarization dependence, with the energies, line w idths, and intensities all differing between transverse-electric and t ransverse-magnetic polarizations, consistent with the predictions of t ransfer-matrix simulations. In addition, anomalous narrowing of the sp ectra on resonance, broadening of the cavity mode by interaction with exciton continuum states and interaction of the cavity mode with quant um-well excited-state transitions are reported. [S0163-1829(97)52040-6 ].