Ra. Hogg et al., ER-RELATED TRAP LEVELS IN GAAS-ER,O STUDIED BY OPTICAL SPECTROSCOPY UNDER HYDROSTATIC-PRESSURE, Physical review. B, Condensed matter, 56(16), 1997, pp. 10255-10263
An optical spectroscopic study of Er-related luminescence in GaAs:Er,O
as a function of temperature and applied hydrostatic pressure is repo
rted. We observed the appearance of different Er-related luminescence
under the application of hydrostatic pressure. The temperature depende
nce of the luminescence intensities for three kinds of Er centers as a
function of pressure is measured and discussed in terms of the trap l
evels formed by the Er centers. It is shown that the energy-transfer p
rocess between photoexcited carriers in the host and the 4f shell of t
he Er3+ ion may occur when trap levels associated with an Er center en
ter the band gap under the application of hydrostatic pressure. [S0163
-1829(97)06840-9].