SURFACE ATOMIC CONFIGURATIONS DUE TO DISLOCATION ACTIVITY IN INAS GAAS(110) HETEROEPITAXY/

Authors
BELK JG PASHLEY DW MCCONVILLE CF SUDIJONO JL JOYCE BA JONES TS
Citation
Jg. Belk et al., SURFACE ATOMIC CONFIGURATIONS DUE TO DISLOCATION ACTIVITY IN INAS GAAS(110) HETEROEPITAXY/, Physical review. B, Condensed matter, 56(16), 1997, pp. 10289-10296
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
56
Issue
16
Year of publication
1997
Pages
10289 - 10296
Database
ISI
SICI code
0163-1829(1997)56:16<10289:SACDTD>2.0.ZU;2-V
Abstract
The surface of a compressively strained InAs epilayer grown on a GaAs( 110) substrate has been resolved at the atomic level by scanning tunne ling microscopy. The growth of the InAs film (>5 ML) involves a class of dislocations which are nucleated at the surface and subsequently ch anneled down to relieve the strain at the buried interface with the Ga As substrate. The effects of the disruption to the atomic geometry in the InAs surface layer due to this dislocation motion, and the accommo dation of these imperfections by continuing epitaxy, are presented. [S 0163-1829(97)09839-1].