LOW-TEMPERATURE RESISTANCE AND ITS TEMPERATURE-DEPENDENCE IN NANOSTRUCTURED SILVER

The dc resistance and the temperature coefficient of resistance (TCR) of bulk nanostructured silver (n-Ag), synthesized by inert gas condens ation and in situ vacuum compaction as well as by the sol-gel method, was investigated in the temperature range from 4.2 to 300 K. The resul ts indicated that for all of the n-Ag specimens with larger grain size s (d>20 nm) and higher densities (relative density D>88%) investigated , their resistivity decreased with decreasing temperature, showing met allic behavior; however, it was found that for the n-Ag with smaller g rain sizes and lower density (D = 45-50 %), the resistance increased w ith decreasing temperature (negative TCR) as its mean size d < 9 nm, e xhibiting nonmetallic behavior. Furthermore, it was found that general ly at a certain (fixed) temperature (at 280 K, for instance). there we re approximately linear relations (with negative slope) between its TC R and reciprocals of both grain size and density. In addition, the abs olute magnitudes of the resistivity of n-Ag were higher than that of p olycrystalline silver (poly-Ag), and increased with decreasing both gr ain size and density. With the model of grain boundary reflection, it was evaluated that the electron mean free path at room temperature was 44 and 33 nm for the n-Ag with grain size 38.5 and 25 nm, respectivel y, both of which are smaller than that of poly-Ag (51 nm). It was also evaluated that the electron transmission coefficient through boundari es decreased monotonically from 0.83 to 0.42 as n-Ag density decreased from 98.5 to 88%, suggesting greater boundary barriers in the n-Ag's with lower densities. The fact that transition of TCR sign from positi ve to negative can be attributed mainly to the dominant scattering cau sed by interfaces as compared to that caused by intragranular phonons in n-Ag with extremely fine grain sizes and low densities. [S0163-1829 (97)07936-8].