INFLUENCE OF BORON DOPANT ON SWITCHING BEHAVIOR OF POLYCRYSTALLINE DIAMOND THIN-FILMS

Authors
WANG XP WANG LJ XU YE SHEN SP
Citation
Xp. Wang et al., INFLUENCE OF BORON DOPANT ON SWITCHING BEHAVIOR OF POLYCRYSTALLINE DIAMOND THIN-FILMS, Chinese Physics Letters, 14(10), 1997, pp. 772-774
Citations number
6
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
14
Issue
10
Year of publication
1997
Pages
772 - 774
Database
ISI
SICI code
0256-307X(1997)14:10<772:IOBDOS>2.0.ZU;2-0
Abstract
Switching behaviour of polycrystalline diamond thin films is reported. Boron-doped diamond thin films were deposited by microwave plasma-ass isted chemical vapor deposition on silicon substrate. Dependence of sw itching behaviour on boron impurity has been investigated. The thresho ld voltage obviously decreases with increasing content of boron dopant . PACS: 68.55.Gi, 85.60.Jb, 81.15.Gh.