DEFECT PERFORMANCE FOR PVD OF TIW AND TIWN FILMS

Citation
E. Cheney et al., DEFECT PERFORMANCE FOR PVD OF TIW AND TIWN FILMS, Solid state technology, 40(11), 1997, pp. 109
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
40
Issue
11
Year of publication
1997
Database
ISI
SICI code
0038-111X(1997)40:11<109:DPFPOT>2.0.ZU;2-Z
Abstract
The relationship between thin-film defect performance and the density of the sputtering target has been investigated [1]. Target manufacture rs can achieve 100% of theoretical density through various titanium tu ngsten (TiW) target-manufacturing techniques (vacuum hot press, hot is ostatic pressing, inert gas hot pressing). However, significant differ ences in defect levels have been observed in a production environment for W-10%Ti targets with the same target density values. This article investigates the effect of target microstructure on thin-film defect p erformance in a production environment. Tight control of the pressing temperature limits the formation of W-rich precipitates in the Ti-rich beta phase. The presence of W-rich precipitates can result in increas ed level of defects. Sputtering targets manufactured by vacuum hot pre ssing show lower levels of oxygen that can also minimize film flaking.