The ability to form high resolution electrified pattern enables the el
ectrification method to be applied to the fabrication of electronic de
vices and new materials. In early studies, we developed a method for d
rawing patterns on an insulating ceramic substrate with an electron be
am. In this work, an ion beam drawing method in addition to the electr
on beam method has been developed to obtain finer electrified patterns
. The formation of the electrified images was carried out with a 5kV e
lectron beam (EB) and with a 30kV focused ion beam (FIB) of a Ga+. The
drawn images were observed with the voltage contrast method in which
the electrified samples are scanned electron beam of 2.5kV. The former
images showed bright contrast, which means negative polarity. In cont
rast, the latter images showed dark contrast, which means positive pol
arity. Sharpness of the images was evaluated by image analysis. The re
sults indicated that the finest width of an electrified line is 8 mu m
on FIB drawing and 24 mu m on EB drawing. It was conclusively shown t
hat electrified lines drawn by FIB are finer and clearer than those ma
de by EB drawing.