INVESTIGATION OF THE CHARACTERISTICS OF CMOS ICS AT LOW-TEMPERATURES

Authors
UCHAIKIN SV
Citation
Sv. Uchaikin, INVESTIGATION OF THE CHARACTERISTICS OF CMOS ICS AT LOW-TEMPERATURES, Instruments and experimental techniques, 40(4), 1997, pp. 581-584
Citations number
10
Categorie Soggetti
Instument & Instrumentation",Engineering
Journal title
Instruments and experimental techniques → ACNP
ISSN journal
00204412
Volume
40
Issue
4
Year of publication
1997
Pages
581 - 584
Database
ISI
SICI code
0020-4412(1997)40:4<581:IOTCOC>2.0.ZU;2-J
Abstract
Certain types of complementary metal-oxide-semiconductor (CMOS) and hi gh-speed complementary metal-oxide-semiconductor (HCMOS) integrated ci rcuits (ICs) were investigated at temperatures T from 1.4 to 297 K. Ba sic parameters of integrated multiplexers operating at liquid helium t emperature were measured. Integrated circuits of the K1564 and 74HC fa mily fabricated by HCMOS technology exhibited the best characteristics at T = 4.2 K.