CHANGE IN ELECTRONIC-PROPERTIES OF NANOCR YSTALLINE SILICON DURING FORMATION OF ITS INTERGRAIN BOUNDARIES

Authors
KHOLOD AN FILONOV AB BORISENKO VE
Citation
An. Kholod et al., CHANGE IN ELECTRONIC-PROPERTIES OF NANOCR YSTALLINE SILICON DURING FORMATION OF ITS INTERGRAIN BOUNDARIES, Doklady Akademii nauk BSSR, 41(4), 1997, pp. 58-61
Citations number
10
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Doklady Akademii nauk BSSR → ACNP
ISSN journal
0002354X
Volume
41
Issue
4
Year of publication
1997
Pages
58 - 61
Database
ISI
SICI code
0002-354X(1997)41:4<58:CIEONY>2.0.ZU;2-J
Abstract
Electronic properties of both nanometer thickness (111) monocrystallin e and nanocrystalline free standing silicon films were calculated by a self-consistent LCAO method. Grain boundaries passivated with hydroge n in the nanocrystalline films are found to induce a direct band gap.