POLARIZATION DEPENDENCE OF PHONON AND ELECTRONIC RAMAN INTENSITIES INPRVO4 AND NDVO4

Citation
Ad. Nguyen et al., POLARIZATION DEPENDENCE OF PHONON AND ELECTRONIC RAMAN INTENSITIES INPRVO4 AND NDVO4, Physical review. B, Condensed matter, 56(13), 1997, pp. 7974-7987
Citations number
31
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
13
Year of publication
1997
Pages
7974 - 7987
Database
ISI
SICI code
0163-1829(1997)56:13<7974:PDOPAE>2.0.ZU;2-U
Abstract
The polarization behavior of the phonon and electronic Raman intensifi es in PrVO4 and NdVO4 has been measured. These experimental intensitie s are compared with the intensities predicted by a polarization depend ent intensity theory. Good agreement was found between theory and expe riment. The fitted values of the ratio F-1/F-2 for PrVO4 and NdVO4 wer e found to be 1.0 and 0.48, respectively. The relative values of the a lpha(q)(t) parameters obtained from the fit were compared with theoret ical values which were derived using both second-and third-order theor y, where the latter included the spin-orbit interaction. Axe's second- order theory was found to adequately explain the relative intensities of electronic Raman transitions in PrVO4 and NdVO4.