Ad. Nguyen et al., POLARIZATION DEPENDENCE OF PHONON AND ELECTRONIC RAMAN INTENSITIES INPRVO4 AND NDVO4, Physical review. B, Condensed matter, 56(13), 1997, pp. 7974-7987
The polarization behavior of the phonon and electronic Raman intensifi
es in PrVO4 and NdVO4 has been measured. These experimental intensitie
s are compared with the intensities predicted by a polarization depend
ent intensity theory. Good agreement was found between theory and expe
riment. The fitted values of the ratio F-1/F-2 for PrVO4 and NdVO4 wer
e found to be 1.0 and 0.48, respectively. The relative values of the a
lpha(q)(t) parameters obtained from the fit were compared with theoret
ical values which were derived using both second-and third-order theor
y, where the latter included the spin-orbit interaction. Axe's second-
order theory was found to adequately explain the relative intensities
of electronic Raman transitions in PrVO4 and NdVO4.