DEFECT-RELATED AUGER EXCITATION OF ERBIUM IONS IN AMORPHOUS-SILICON

The transition probability for defect-related Anger excitation (DRAE) of a rare-earth ion inserted into an amorphous matrix is calculated. T he result is applied to excitation of an erbium ion in amorphous silic on occurring via capture of an electron by the dangling bond (D) defec t. We have demonstrated high efficiency of the DRAE process which ensu res strong photoluminescence and electroluminescence of erbium ions in an amorphous silicon matrix. It is shown that the temperature quenchi ng of erbium luminescence in amorphous silicon is controlled by compet ition of the DRAE and the multiphonon nonradiative transitions.