HIGH-TEMPERATURE KINETICS OF SI-CONTAINING PRECURSORS FOR CERAMIC PROCESSING

Experimental investigations of high-temperature kinetics of Si-precurs or molecules relevant to CVD and ceramic processing are described. Rea ction systems using SiH4, Si2H6, and SiCl4 highly diluted in argon wer e studied ina shock tube, a high-temperature wave reactor, by monitori ng in situ the concentrations of atomic or radical reactants Si, H, Cl , SiH, and SiH2. Because of the very high dilution, the measured prope rties are sensitive to a limited number of elementary reactions, allow ing a relatively direct determination of the respective rate coefficie nts. Both thermal pyrolysis and laser flash photolysis methods were us ed to expand the investigated temperature range. An overview of the bi molecular Si-atom reactions is given.