WELL-WIDTH DEPENDENT STUDIES OF INGAN-GAN SINGLE-QUANTUM WELLS USING TIME-RESOLVED PHOTOLUMINESCENCE TECHNIQUES

We present a well-width-dependent study of In-GaN-GaN single-quantum w ells using a time-resolved photoluminescence (PL) technique. At room t emperature (RT), carrier recombination was found to be dominated by in terface-related nonradiative processes. The dominant radiative recombi nation at RT was through band-to-band free carriers. For the sample gr own at a higher growth rate, we observed a longer luminescence lifetim e, which was attributed to an improved quantum-well (QW) interface. At low temperatures, the carrier recombination was found to be dominated by radiative recombination through a combination of free excitons, bo und excitons, and free carriers. A decrease of radiative exciton lifet ime was observed with decreased QW thickness.