Ck. Sun et al., WELL-WIDTH DEPENDENT STUDIES OF INGAN-GAN SINGLE-QUANTUM WELLS USING TIME-RESOLVED PHOTOLUMINESCENCE TECHNIQUES, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 731-738
We present a well-width-dependent study of In-GaN-GaN single-quantum w
ells using a time-resolved photoluminescence (PL) technique. At room t
emperature (RT), carrier recombination was found to be dominated by in
terface-related nonradiative processes. The dominant radiative recombi
nation at RT was through band-to-band free carriers. For the sample gr
own at a higher growth rate, we observed a longer luminescence lifetim
e, which was attributed to an improved quantum-well (QW) interface. At
low temperatures, the carrier recombination was found to be dominated
by radiative recombination through a combination of free excitons, bo
und excitons, and free carriers. A decrease of radiative exciton lifet
ime was observed with decreased QW thickness.