WAFER BONDING TECHNOLOGY AND ITS APPLICATIONS IN OPTOELECTRONIC DEVICES AND MATERIALS

Citation
Zh. Zhu et al., WAFER BONDING TECHNOLOGY AND ITS APPLICATIONS IN OPTOELECTRONIC DEVICES AND MATERIALS, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 927-936
Citations number
45
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
ISSN journal
1077260X
Volume
3
Issue
3
Year of publication
1997
Pages
927 - 936
Database
ISI
SICI code
1077-260X(1997)3:3<927:WBTAIA>2.0.ZU;2-4
Abstract
Direct wafer bonding process has found broad applications in many crit ical areas including both commercial and state-of-the-art photonic dev ices and more recently, formation of semiconductor compliant substrate s. Using the wafer bonding technology, we have demonstrated 1.3-mu m v ertical-cavity surface-emitting lasers (VCSEL's) with a 1-mA continuou s-wave (CW) threshold current and 0.83-mA pulsed threshold current. Su perior device performance has also been achieved,vith photodetectors a nd micromachined tunable devices. Applying the wafer bonding process i n a novel way, we have fabricated compliant universal substrates on wh ich largely mismatched (e.g., 15% mismatch) heteroepitaxial layers can be grown defect free.