T. Tanbunek et al., BROAD-BAND TUNABLE ELECTROABSORPTION MODULATED LASER FOR WDM APPLICATION, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 960-967
Design and fabrication of the first 1.55-mu m wavelength turnable elec
troabsorption modulated laser integrated with a bent waveguide distrib
uted-feedback (DFB) laser is reported. A low-threshold high-efficiency
and stable single-longitudinal-mode operation is obtained when the el
ectrodes of the bent DFB waveguide were uniformly pumped. In a normal
configuration where the modulator part is used as an intensity modulat
or (i.e., AR coating an the modulator side and HR coating on the DFB s
ide), stable single longitudinal mode output power close to 40 mW in f
ree space is obtained with a 0-V bias to the modulator and an extincti
on ratio of up to 15 dB, at 2.5 V. This single made stability is due t
o the continuously distributed phase shift implemented ht the structur
e thus reducing the photon pile-up inside the laser cavity as compared
to apr abruptly quarter-wave phase-shifted DFB laser. With a nonunifo
rm injection ire I-he multiple electrodes, it was possible to select o
ne particular single longitudinal mode out of the three neighboring mo
des inside the broad reflection band of the reflector. A wavelength tu
ning range of about 3.5 nm was obtained while maintaining an optical o
utput power of more than 2 dBm from each made. The device has a very l
ow chirp (0.01-nm peak-to-peak) where modulated with a 2.5 Gb/s pseudo
random binary sequence (PRBS) data stream and an error-free transmissi
on over 200 km of non-DSF fiber has been demonstrated for all four wav
elength channels separated by 100-GHz spacing. Also, when the modulato
r part of the structure is used as a phase tuning element (i.e., antir
eflectire (AR) coating on the DFB side and HR coating on the modulator
side), me hare successfully demonstrated high-speed optical packet sw
itching with a fast and wide tunable wavelength range. The optical pac
kets can be modulated at 2.5 Gb/s and may be switched among four wavel
ength channels in less than one bit period.