The ability to produce deliberately shaped or curved two-dimensional e
lectron gases in semiconductors using recent developments in technolog
y, for example regrowth of III-V semiconductors on patterned or etched
substrates, opens the possibility of investigating not only the behav
iour of electrons in a curved quasi-two-dimensional space, and the eff
ects of varying that curvature, but also presents a novel way of inves
tigating electron transport properties in a non-uniform transverse hig
h magnetic field. It is shown that a semi-infinite two-dimensional ele
ctron gas subjected to a non-uniform magnetic field has, in addition t
o current-carrying edge states, one-dimensional states which lie withi
n the interior of the gas, which also have a finite dispersion, an eff
ect which may be used to create quantum wires or other structures. It
is also shown that, in the absence of a magnetic field, curvature of t
he two-dimensional electron gas gives rise to a potential variation wh
ich is inversely proportional to the square of the radius of curvature
, an effect which may also be used to confine the electronic motion to
one dimension.