EXFOLIATION PROCESS OF INP CAUSED BY H-1 AND HE-4 ION-IMPLANTATION AND ITS CORRELATION WITH ION RANGE PARAMETERS

Exfoliation of crystalline InP by 0.6-2.1 MeV H-1 and 1.0-2.6 MeV He-4 ion implantation at random orientation has been studied. The correlat ion between the depth of the produced craters and ion range parameters has been established by measuring the implanted He-4 ion depth and de fect distributions by elastic H-1 backscattering and He-4 ion channell ing methods, respectively. The measurements indicate that the produced crater depths correlate with maximum ion range values, The modal rang e values of the implanted He-4 ions were determined from the depth pro files obtained by the elastic proton backscattering technique. The cra ter depths deviate from the modal ranges by 9% to 3% for 1.0 to 2.5 Me V,implanted He-4 ions. The deduced ranges are in good agreement with t he simulated values obtained by the Monte Carlo calculations. (C) 1997 Elsevier Science B.V.