AFM STUDIES ON ZNS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY

Citation
J. Ihanus et al., AFM STUDIES ON ZNS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY, Applied surface science, 120(1-2), 1997, pp. 43-50
Citations number
26
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
120
Issue
1-2
Year of publication
1997
Pages
43 - 50
Database
ISI
SICI code
0169-4332(1997)120:1-2<43:ASOZTG>2.0.ZU;2-K
Abstract
Polycrystalline ZnS films were grown from ZnCl2 and H2S on glass and m ica using the atomic layer epitaxy (ALE) technique. Morphological and crystalline changes during the ALE growth of Zns were studied by AFM a nd XRD. AFM measurements revealed that substantial agglomeration took place in the beginning of the growth. On glass the nucleation density of ZnS was higher than on mica and consequently the films on glass rem ained smoother than those on mica. XRD measurements revealed that orie ntation of the films was stronger on mica than on glass. (C) 1997 Else vier Science B.V.