Eb. Halac et al., STRUCTURE AND THERMAL-BEHAVIOR OF N CONTAINING A-C FILMS OBTAINED BY HIGH-ENERGY ION-BEAM DEPOSITION, Applied surface science, 120(1-2), 1997, pp. 139-148
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
a-C:N films have been obtained by high energy ion beam deposition at a
mbient temperature, using CH4-N-2 and CH4-NH3 as starting gas mixtures
. The as-deposited and thermally annealed samples were studied using A
PS, Raman, KVV Auger and EELS spectroscopies. The experimental results
indicate that the sp(2) bonded C content is about 60% and that there
is a reduced short range order in the a-C:N Elms as compared with a-C
ones. Thermal graphitization is dependent on the thickness and chemica
l composition of the films; it is suggested that the size of the graph
itic clusters is smaller in annealed a-C:N samples than in annealed N
free films. For N containing films thicker than about 300 rim, Raman s
pectra and electrical conductivity show that graphitization occurs at
about 400 degrees C; for films with a thickness lower than 150 nm grap
hitization occurs at around 700 degrees C. (C) 1997 Elsevier Science B
.V.