IMPURITY STATES AND OPTICAL-TRANSITIONS IN UNIAXIALLY DEFORMED NARROW-GAP SEMICONDUCTORS

The effect of uniaxial deformation along cubic axis on the states of p oint defects in narrow-gap semiconductors is studied. The energy depen dence of the splitting of deep h-states into two doubly degenerate h, and h2 states on the deformation value and the semiconductor character istics is calculated. Changes of optical transitions from deep 1-c and h-centres with deformation are also examined. It is shown, that the a bsorption coefficient in this case is essentially anisotropic and its spectral dependences essentially differ from those in the case without deformation.