VOLTAGE AND CURRENT LOSS IN SEMICONDUCTOR SOLAR-CELLS FROM MCV AND SIMULTANEOUS IV MEASUREMENTS

We present a method for determining the voltage and current loss in so lar cells using the modulation capacitance voltage measuring technique . Both losses can be investigated in the forward biased mode and the g enerator mode. The method is especially suitable for characterising: p articular loss components due to band offsets and interface recombinat ion in heteroemitter solar cells. Nonlinear loss-versus-current charac teristics were generally found for a-Si:H(p(+)), SIPOS(n(+)) and ZnO(n (+)) emitters on c-Si. The losses are strongly modified by the prepara tion which affects the heterojunction interface. These results can giv e insight into effects of recombination and band offsets in both bands . PACS. 84.60.Jt; 73.40.Lg; 73.50.Gr; 73.40.-c.