CORRESPONDENCE AMONG PL MEASUREMENT, MBIC MEASUREMENT AND DEFECT DELINEATION IN POLYCRYSTALLINE CAST-SI SOLAR-CELLS

Authors
SHIMOKAWA R TAJIMA M WARASHINA M KASHIWAGI Y KAWANAMI H
Citation
R. Shimokawa et al., CORRESPONDENCE AMONG PL MEASUREMENT, MBIC MEASUREMENT AND DEFECT DELINEATION IN POLYCRYSTALLINE CAST-SI SOLAR-CELLS, Solar energy materials and solar cells, 48(1-4), 1997, pp. 85-91
Citations number
5
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
48
Issue
1-4
Year of publication
1997
Pages
85 - 91
Database
ISI
SICI code
0927-0248(1997)48:1-4<85:CAPMMM>2.0.ZU;2-2
Abstract
We report the correspondence between the photoluminescence (PL) measur ement, monochromatic-light-beam-induced current (MBIC) measurement and defect delineation in polycrystalline cast-Si solar cells. It was fou nd that the peak of the band-edge PL emission in the hydrogenerated an d non-hydrogenerated cast-Si shifted from 1.093 eV in the single cryst alline CZ-Si to 1.075 eV at room temperature and the band-edge PL mapp ing corresponded with the MBIC mapping and defect delineation pattern if excluding the surface damages delineated by the MD-1 etchant.