SURFACE PASSIVATION AT A SIO2 N(+)-LAYER INTERFACE/

Effects of surface passivation at a SiO2/phosphorus-doped layer (n(+)- layer) front interface were investigated. Two kinds of cells with diff erent surface concentration were fabricated. Surface potential at the interface was changed by applying bias voltage (V-F). Both open-circui t voltage and short-circuit current of the cell with n(+)-layer concen tration of 3 x 10(18) cm(-3) depended on V-F. Internal quantum efficie ncy of this cell in short- and medium-wavelength range was changed by applying V-F. It was shown that cell performance was improved by the a ccumulation of electrons at the interface. To consider the work functi on difference between a material on the SiO2 film and the n(+)-layer i s important, and cell performance can be further improved by applying V-F to passivate the SiO2/n(+)-layer interface.