POLYCRYSTALLINE SILICON THIN-FILMS AND SOLAR-CELLS PREPARED BY RAPID THERMAL CVD

Polycrystalline silicon (poly-Si) films(similar to 10 mu m) were grown from dichlorosilane by a rapid thermal chemical vapor deposition (RTC VD) technique, with a growth rate up to 100 Angstrom/s at the substrat e temperature (T-s) of 1030 degrees C. The average grain size and carr ier mobility of the films were found to be dependent on the substrate temperature and material. By using the poly-Si films, the first model pn(+) junction solar cell without anti-reflecting (AR) coating has bee n prepared on an unpolished heavily phosphorus-doped Si wafer, with an energy conversion efficiency of 4.54% (AM 1.5, 100 mW/cm(2), 1 cm(2)) .