INTERFACES IN A-SI-H SOLAR-CELL STRUCTURES

The performance of amorphous silicon based solar cells depends on the tailored properties of the various layer materials making up the cell structure as well as on the properties and on the design of the interf ace regions between the layers. The electronic properties related to t he various interfaces are markedly influenced by the Fermi level posit ion within these regions, and by structural properties and chemical co mpositions resulting from the preparation conditions. Results are pres ented for the p/i and the TCO/p interfaces and discussed with respect to device performance. Further examples of interface effects are descr ibed which are related to chemical reactions and hydrogen diffusion in the course of sample preparation.