T. Endoh et al., NEW WRITE ERASE OPERATION TECHNOLOGY FOR FLASH EEPROM CELLS TO IMPROVE THE READ DISTURB CHARACTERISTICS/, IEICE transactions on electronics, E80C(10), 1997, pp. 1317-1323
This paper describes the new write/erase operation methods in order to
improve the read disturb characteristics for Flash EEPROM cells which
are written by channel hot electron injection and erased by F-N tunne
ling emission from the floating gate to the substrate. The new operati
on methods is either applying a reverse polarity pulse after each eras
e pulse or applying a series of shorter erase pulses instead of a long
single erase pulse. It is confirmed that by using the above operation
methods, the leakage current can be suppressed, and then the read dis
turb life time after 10(5) cycles write/erase operation is more than 1
0 times longer in comparison with the conventional method. This memory
cell by using the proposed write/erase operation method has superior
potential for application to 256 Mbit Flash memories as beyond.